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    • 专利摘要:
    SUMMARY According to one aspect of the present invention, there is provided a method. The method includes dispersing a substantially amorphous cadmium tin oxide layer on a support member; and thermally treating the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external cold to form a transparent layer, the transparent layer having an electrical resistivity of less than about 2x-4 Ohm-cm. A method of manufacturing a photoelectric device is also provided.
    公开号:SE537990C2
    申请号:SE1151169
    申请日:2011-12-07
    公开日:2016-01-19
    发明作者:Holly Ann Blaydes；George Theodore Dalakos；David William Vernooy；Allan Robert Northrup；Juan Carlos Rojo；Peter Joel Meschter；Hongying Peng；Hongbo Cao；Yangang Andrew Xi；Robert Dwayne Gossman；Anping Zhang
    申请人:Gen Electric；
    IPC主号:
    专利说明:

    BACKGROUND OF THE INVENTION The invention relates generally to methods for forming transparent conductive code layers for photoelectric devices. More particularly, the invention relates to methods for forming crystalline cadmium-tin oxide oxide layers by heat treatment in the absence of cadmium from an external Ulla.
    Thin layer solar cells or photoelectric devices typically include a plurality of semiconductor layers distributed on a transparent substrate, one layer acting as a window layer and a second layer acting as an absorbent layer.
    The window layer allows penetration of solar training to the absorbent layer, where the optical energy is converted into usable electrical energy. Cadmium tellurium / cadmium sulfide (CdTe / CdS) heterooverang-based photoelectric cells are one such example of thin-layer solar cells. Typically, a thin layer of transparent conductive oxide (TCO) is deposited between the substrate and the window layer (e.g., CdS) to act as a front contact current collector. However, conventional TCOs, such as tin oxide, indium tin oxide, and zinc oxide, have high electrical resistivity at thicknesses necessary for good optical transmission. The use of cadmium tin oxide (CTO) as TCO provides better electrical, optical, and mechanical properties, as well as stability at elevated temperatures. However, CTO / CdS-based thin-layer solar cells still faced challenges, for example, thick CdS-layers typically result in low degrees of heat in the device, while thin CdS-layers lead to reduced open-circuit voltage (Voc). In some cases, in order to achieve high efficiencies of the device with thin CdS layers, a thin layer of a buffer material, such as a tin oxide layer (SnO 2), is laid between the cadmium tin oxide (CTO) and the window layers (CdS).
    The typical method used to make a high quality CTO layer includes depositing a layer of amorphous cadmium tin oxide on a substrate, followed by slow thermal heat treatment of the CTO layer, which is heat treated in the presence of a CdS layer near the CTO layer. surface with the intention of achieving the desired transparency and 1 resistivity. The use of expensive CdS at each heat treatment step can be an economic disadvantage for large scale production as the CdS layer cannot be reused and the cost of CdS and the glass support member makes the process expensive on a large scale. Furthermore, CdS heat treatment by CTO is the answer to implement on a large scale in a continuous growth environment, since the process requires assembly and disassembly of disks before and after the heat treatment steps.
    There is thus a need to reduce the number of steps for deposition and heat treatment of CTO layers in the manufacture of photoelectric devices, resulting in reduced costs and improved production capacity. Furthermore, there is a need to provide cost-effective electrodes and photoelectric devices which are amplified using cadmium-tin oxide having the desired electrical and optical properties.
    BRIEF DESCRIPTION OF THE INVENTION Embodiments of the present invention are provided to meet these and other needs. An embodiment is a method. The method includes distributing a substantially amorphous cadmium-tin oxide layer on a support member; and thermally treating the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external cold to form a transparent layer, the transparent layer having an electrical resistivity of about 2x-4 Ohm-cm. . Another embodiment is a method. The method includes distributing a substantially amorphous cadmium tin layer on a support member by reactive sputtering of one or more and thermally treating the substantially amorphous cadmium tin oxide slat in an atmosphere which is substantially free of cadmium from an external cold to form a transparent layer, the transparent layer having an electrical resistivity of less than about 2x-4 Ohm-cm.
    Yet another embodiment of a method of manufacturing a photoelectric device. The method includes distributing a substantially amorphous cadmium-tin oxide layer on a support member; thermally treating the substantially amorphous cadmium tin cod layer in an atmosphere substantially free of cadmium from an external cold to form a transparent layer, the transparent layer having an electrical resistivity of less than about 2x-4 Ohm-cm; that a first semiconductor layer has been distributed on the transparent layer; distributing a second semiconductor layer on the first semiconductor layer; and distributing a rear contact layer on the second semiconductor layer to form a photoelectric device.
    DRAWINGS These and other features, aspects and advantages of the present invention will become more apparent when the following detailed description is read with reference to the accompanying drawings, in which: Fig. 1 is a schematic view of a substantially amorphous cadmium tin oxide layer distributed on a standing element, in accordance with an exemplary embodiment of the invention.
    Fig. 2 is a schematic figure of a transparent layer distributed on a support element, in accordance with an exemplary embodiment of the invention.
    Fig. 3 shows a schematic figure of a transparent layer as distributed on a support element, in accordance with an exemplary embodiment of the invention.
    Fig. 4 is a schematic figure of a photoelectric device, in accordance with an exemplary embodiment of the invention.
    Fig. 5 is a schematic figure of a photoelectric device, in accordance with an exemplary embodiment of the invention.
    Fig. 6 shows the weighted absorption in relation to surface resistance for transparent layer formed by heat treatment in the vicinity of CdS and standard thermal heating treatment, in accordance with an exemplary embodiment of the invention.
    Fig. 7 shows the XRD samples of a transparent layer, in accordance with an exemplary embodiment of the invention.
    Fig. 8A shows an XPS profile of a transparent layer, in accordance with an exemplary embodiment of the invention. Fig. 8B shows an XPS profile of a transparent layer, in accordance with an exemplary embodiment of the invention.
    Fig. 9 shows the effect of ramp rate on the surface resistance, in accordance with an exemplary embodiment of the invention.
    Fig. 10 shows the percentage absorption of transparent layers deposited by reactive sputtering using miles having different Cd: Sn atomic ratios, in accordance with an exemplary embodiment of the invention.
    Fig. 11 shows the electrical resistivity of transparent layer deposited by reactive sputtering using miles having different Cd: Sn atomic ratios, in accordance with an exemplary embodiment of the invention.
    Fig. 12 shows the barard density of transparent layer deposited by reactive sputtering using miles having different Cd: Sn atomic ratios, in accordance with an exemplary embodiment of the invention.
    Fig. 13 shows the mobility (mobility) of transparent layers deposited by reactive sputtering using miles having different Cd: Sn atomic ratios, in accordance with an exemplary embodiment of the invention.
    Fig. 14 shows the effect of the conditions for reactive sputtering on electrical resistivity of transparent layer, in accordance with an exemplary embodiment of the invention.
    Fig. 15 shows the effect of the conditions for reactive sputtering on the barard site of transparent layer, in accordance with an exemplary embodiment of the invention.
    Fig. 16 shows the effect of reactive sputtering on the mobility of transparent layers, in accordance with an exemplary embodiment of the invention.
    Fig. 17 shows the efficiency and optical absorption of photoelectric cell, in accordance with an exemplary embodiment of the invention.
    Fig. 18 shows the comparison between the efficiency values of photoelectric cell obtained using CTO films heat treated using standard thermal heat treatment and heat treatment near CdS. DETAILED DESCRIPTION As discussed in detail below, certain embodiments of the invention provide a method of forming crystalline cadmium-tin oxide layer by heat treatment in the absence of an external cadmium cold. Some other embodiments of the invention provide a method of distributing an amorphous cadmium-tin oxide film by reactive co-sputtering and forming a crystalline cadmium-tin oxide layer by heat treatment in the absence of an external cadmium cold. The methods can enable a cost effective manufacturing process for the formation of crystalline cadmium tin oxide layer by eliminating the use of an expensive CdS / glass portion being sacrificed, which is typically used in heat treatment near CdS. Furthermore, the methods allow a continuous process which eliminates the need for assembly and disassembly of boards during the heat treatment process, which results in higher capacity and lower manufacturing costs.
    The crystalline cadmium-tin oxide films made in accordance with certain embodiments of the invention have electrical and optical properties comparable to cadmium-tin oxide films heat-treated using CdS film and significantly better than non-heat-treated cadmium-tin oxide film-film or cadmium-tin oxide films. varnne treated in the absence of an external cadmium cold. In some embodiments, the amorphous cadmium tin oxide film is advantageously treated in the absence of an external cadmium cold in order to obtain electrical resistivity of less than about 2 x -4 Ohm-cm, mobility of about 45 cm 2 / Vs. , and the barard site which is larger than about 8 x cm-3. In a particular embodiment, the amorphous cadmium-tin oxide film is heat-treated advantageously in the absence of an external cadmium cold in order to obtain electrical resistivity of less than about 1.5 x -4 Ohm-cm, mobility greater than about 50 cm 2 / Vs. , and the barard site which is about 9 x cm-3. Crystalline CTO films that have a combination of low absorbance, low resistivity, high mobility, and high barard density can be difficult to improve the efficiency and manufacturability of thin film solar cells. A method of making crystalline CTO films having such an advantageous combination of electrical and optical properties is provided in accordance with certain embodiments of the present invention. In some embodiments, the desired combination of electrical and optical properties of the crystalline cadmium tin oxide layer has been advantageously obtained by changing one or more proportions of sputtering, the conditions of heat treatment, grinding composition, or the composition of the cadmium tin oxide layer as deposited.
    The general use of cracks used throughout the specification and claims may be used to modify any quantified preparation which may be varied without result in a change in the basic function to which it relates. Consequently, a value that is modified by a term or multiple terms such as "about" is not limited to the exact specified value. In some cases, the general use of language may correspond to the precision of an instrument for mimicking the value.
    In the following description and claims, the singular forms "en", "ett", "den" and "det" also include the plural forms unless the context Hart dictates otherwise.
    As used herein, the terms "may" and "perhaps" indicate the possibility of an occurrence within a set of relationships; the action of a specified property, feature or function; and / or qualifying another verb by expressing one or more of a form, ability, or possibility associated with the qualified verb. Consequently, the use of "may" and "perhaps" indicates that a modified term appears to be appropriate, capable, or appropriate for an indicated form, function, or application, while considering that in certain circumstances the modified term may not be appropriate. , capable, or fitting. For example, under certain circumstances, a trade or fortune may be expected, while in other circumstances the trade or fortune may not be endangered. This difference is captured by the terms "can" and "maybe".
    The terms "transparent region", "transpatent layer" and "transparent electrode" as used herein refer to a region, layer or article which allows an average transmission of at least 80% of incident electromagnetic radiation having a wavelength in a range from about 300 nm to about 850 nm. As used here, the term "distributed on" refers to layers that are distributed in direct contact with each other or indirectly through the intermediate layers between them. As discussed in detail below, certain embodiments of the invention are directed to a method of forming an improved crystalline cadmium tin codend layer for a transparent electrode and a photoelectric device. The method is described with reference to Figures 1-4. As indicated in, for example, Figure 1, the method includes distributing a substantially amorphous cadmium-tin oxide layer 120 on a support member 110.
    The substantially amorphous cadmium tin oxide layer 120 includes a first surface 122 and a second surface 124. In one embodiment, the second surface 124 is adjacent to the stud member 110.
    As used herein, the term "cadmium tin oxide" includes a composition of cadmium, tin and oxygen. In some embodiments, cadmium-tin oxide includes a steel-diametrical composition of cadmium and tin, wherein, for example, the atomic ratio of cadmium in relation to tin is about 2: 1. In some other embodiments, cadmium-tin oxide contains a non-stoichiometric composition of cadmium and tin, for example, the atomic ratio of cadmium in relation to tin is in the range of less than about 2: 1 or stone of about 2: 1. As used herein, the terms "cadmium tin oxide" and "CTO" may be used interchangeably. In some embodiments, cadmium-tin oxide may also include dopants such as copper, zinc, calcium, yttrium, zirconium, hafnium, vanadium, tin, ruthenium, magnesium, indium, zinc, palladium, rhodium, titanium, fluorine, aluminum, or combinations. . "Substantially amorphous cadmium tin oxide" as used herein refers to a cadmium tin oxide layer which does not have a distinct crystalline sample as observed by X-ray diffraction (XRD).
    In some embodiments, cadmium tin oxide may act as a transparent conductive oxide (TCO). Cadmium tin oxide as a TCO has several advantages including superior electrical, optical, surface and mechanical properties and Increased stability at elevated temperatures compared to tin oxide, indium cod, indium tin oxide, and other transparent conductive codes.
    The electrical properties of cadmium-tin oxide may be due in part to the composition of cadmium-tin oxide may be characterized in certain embodiments of the atomic concentration of cadmium and tin, or alternatively in certain other embodiments of the atomic ratio of cadmium in relation to tin in cadmium-tin oxide. Atomic concentration of cadmium in relation to tin, as used herein, refers to the ratio of atomic concentration of cadmium in relation to tin in cadmium-tin oxide. Atomic concentrations of cadmium and tin and the corresponding atomic ratio are usually measured using, for example, X-ray photoelectron spectroscopy (XPS).
    In one embodiment, the atomic ratio of cadmium relative to tin in the substantially amorphous CTO layer 120 is less than about 2.5: 1. In another embodiment, the atomic ratio of cadmium relative to tin in the substantially amorphous CTO layer 120 is equal to or less than about 2: 1. In yet another embodiment, the atomic ratio of cadmium relative to tin in the substantially amorphous CTO layer 120 is equal to or less than about 1.8: 1. In a particular embodiment sa, the atomic ratio of cadmium relative to tin in the substantially amorphous CTO layer 120 is about 2: 1. In one embodiment, the atomic ratio of cadmium relative to tin in the substantially amorphous CTO layer is 120 to a range of from about 1.2: 1 to about 2.5: 1. In another embodiment, the atomic ratio of cadmium relative to tin in the substantially amorphous CTO layer 120 is said to be in a range of from about 1.4: 1 to about 2.25: 1. In yet another embodiment, the atomic ratio of cadmium relative to tin in the substantially amorphous CTO layer 120 is in the range of from about 1.5: 1 to about 2: 1. In a particular embodiment, the atomic ratio of cadmium relative to tin in the substantially amorphous CTO layer 120 is in the range of from about 1.7: 1 to about 2: 1. In one embodiment, the atomic concentration of cadmium in the substantially amorphous CTO layer 120 is in the range of about 20% to about 40% of the total atomic content of cadmium tin oxide. In another embodiment, the atomic concentration of cadmium in the substantially amorphous CTO layer 120 is said to be in the range of about 25% to about 35% of the total atomic content of cadmium tin oxide. In a particular embodiment, the atomic concentration of cadmium in the substantially amorphous CTO layer 120 is said to range from about 28% to about 32% of the total atomic content of cadmium tin oxide. In one embodiment, the atomic concentration of tin in the substantially amorphous CTO layer 120 is within a range of about 10% to about 30% of the total atomic content of cadmium tin oxide. In another embodiment, the atomic concentration of tin in the substantially amorphous CTO layer 120 is in the range of about 15% to about 28% of the total atomic content of cadmium tin oxide. In a particular embodiment, the atomic concentration of tin in the substantially amorphous CTO layer is 120 .mu.m, a range from about 18% to about 24% of the total atomic content of cadmium tin oxide. In one embodiment, the atomic concentration of oxygen in the substantially amorphous CTO layer 120 is in the range of about 30% to about 70% of the total atomic content of cadmium tin oxide. In another embodiment, the atomic concentration of oxygen in the substantially amorphous CTO layer 120 is in the range of about 40% to about 60% of the total atomic content of cadmium tin oxide. In a different embodiment, the atomic concentration of oxygen in the substantially amorphous CTO layer 120 is in a range from about 44% to about 50% of the total atomic content of cadmium tin oxide.
    In one embodiment, the substantially amorphous CTO layer 120 is distributed on the support member 110 by means of any adhesive technique, such as sputtering, evaporation, chemical vapor deposition, spin coating, spray coating. ("spray coating"), or dip coating. For example, in a embodiment, the substantially amorphous CTO layer 120 may be formed by dipping a support member 110 in a solution of a reaction product containing cadmium and tin derived from a cadmium compound and a tin compound.
    In a particular embodiment, the substantially amorphous CTO layer 120 is distributed on the support member 110 by sputtering. The term "sputtering" as used herein refers to a method of vapor deposition (PVD) of depositing thin films by spraying material from a mile or a mile, which is then deposited on a substrate, such as, for example, the support member 110. In one embodiment, the substantially amorphous CTO layer 120 may be distributed on the support member 110 by magnetron sputtering. The term "magnetron sputtering" as used herein refers to sputtering or etching using a magnetron using crossed electric and magnetic blankets. In one embodiment, the substantially amorphous CTO layer 120 may be distributed on the support member 110 by radio frequency (RF) magnetron sputtering or by means of direct current (DC) magnetron sputtering. RF sputtering or DC sputtering refers to a sputtering method in which an RF power source and a DC power source, respectively, are used during the sputtering process. In some embodiments, a substantially amorphous CTO layer 120 is distributed on the support member 110 by co-sputtering, i.e., sputtering using a plurality of miles. In a particular embodiment, there is a substantially amorphous CTO layer 120 distributed on the support member 110 by sputtering for a single mile. The sputtering mill (s) can be milled, formed, or shaped by any hot process and in any form, composition, or configuration suitable for use with any hot sputtering tool, machine, apparatus, or system. .
    In one embodiment, a substantially amorphous CTO layer 120 is distributed on the support member 110 by sputtering from one or more targets selected from a group consisting of cadmium oxide, tin oxide and combinations thereof. In some embodiments, a substantially amorphous CTO layer 120 is distributed on the support member 110 by co-sputtering, a first target including cadmium oxide and a second target including tin oxide. . In some embodiments, a substantially amorphous CTO layer 120 is distributed on the substrate by sputtering from a single target that incorporates a combination of cadmium oxide and tin oxide. In a particular embodiment, a substantially amorphous CTO layer 120 is distributed on the support member 110 using a ceramic cadmium-tin oxide mill. In such cases, the substantially amorphous CTO layer 120 may be distributed on the support member 110 by non-reactive sputtering methods, there being virtually no reaction between the materials ejected from the mill.
    In a particular embodiment, the substantially amorphous CTO layer 120 is distributed on the support member 110 by reactive sputtering. The term "reactive sputtering" as used herein refers to a sputtering method of the deposited film formed by chemical reaction between the material ejected from the mill and a reactive gas introduced into the vacuum chamber. The composition of the film can be controlled by varying the relative pressures of the inert and reactive gases. In one embodiment, the substantially amorphous CTO layer 120 is distributed on the support member 110 by reactive atomization in the presence of a reactive gas such as oxygen. In such cases, a substantially amorphous CTO layer 120 is distributed on the support member 110 by sputtering from one or more targets selected from the group consisting of cadmium, tin and combinations thereof. In one embodiment, a substantially amorphous CTO layer 120 is distributed on the support member 110 by reactive sputtering using a single metallic grinder, the metallic grinder including a mixture of cadmium and tin metals or by reactive co-sputtering using two . different metal mills, that is to say a cadmium mill and a tin mill.
    The thickness, composition and morphology of the sputtering CTO layer 120 may depend in part on the sputtering conditions used, such as the grinding composition, type of sputtering gas used, volume of sputtering gas, sputtering pressure, or sputtering force. Without being bound by theory, it is believed that by varying the sputtering conditions for depositing a substantially amorphous CTO layer 120, the resulting crystalline cadmium tin oxide layer having the desired optical and electrical properties can be advantageously prepared according to certain embodiments. of the invention.
    In one embodiment, the atomic ratio of cadmium relative to tin in the deposited substantially amorphous CTO layer 120 may be directly proportional to the atomic ratio of cadmium relative to tin in the mill or mill. In some embodiments, the atomic ratio of cadmium relative to tin in the deposited substantially amorphous CTO layer 120 may be lower than the atomic ratio of cadmium relative to tin in the mill or mill. In some other embodiments, the atomic ratio of cadmium relative to tin in the deposited substantially amorphous CTO layer 120 may be substantially the same as the atomic ratio of cadmium relative to tin in the mill or mill. Without being bound by theory, it is believed that when depositing a substantially amorphous CTO layer 120 on the support member 110 by reactive sputtering, the atomic concentration of cadmium and tin in the deposited layer may be directly proportional to the atomic concentration of cadmium and tin therein. one or more sprain mills.
    In one embodiment, the atomic ratio of cadmium in relation to tin in the one or more sputtering mills is in a range from about 1.2: 1 to about 2.5: 1. In another embodiment, the atomic ratio of cadmium in relation to tin in the one or more sputtering mills ranges from about 1.4: 1 to about 2.25: 1. In yet another embodiment, the atomic ratio of cadmium in relation to tin in the one or more sputtering mills is in a range from about 1.5: 1 to about 2: 1. In a particular embodiment, the atomic ratio of cadmium in relation to tin in one or more sputtering templates is in a range from about 1.5: 1 to about 1.8: 1. In one embodiment, a substantially amorphous CTO layer 120 is distributed on the support member 110 by sputtering using oxygen as the sputtering atmosphere. In another embodiment, a substantially amorphous CTO layer 120 is distributed on the support member 110 by sputtering using a mixture of oxygen and argon gas as the sputtering atmosphere. In some embodiments, the percentage content of oxygen is greater than about 90% by volume of the total amount of gas used during the sputtering process. In some embodiments, the percentage of oxygen content is about 100% by volume of the total amount of gas used during the sputtering process. In some other embodiments, the percentage content of oxygen in the Mom range ranges from about 60 vol ') / 0 to about 100 vol% of the total amount of gas used during the sputtering process. In one embodiment, the sputtering process using a sputtering force Mom is performed in a range from about 50 watts to about 150 watts. In one embodiment, the sputtering process is performed at a sputtering pressure ranging from about 1 mTorr to about 20 mTorr.
    In one embodiment, it has a substantially amorphous CTO layer 120 distributed on the support member 110 by sputtering using a cadmium-tin oxide template having an atomic ratio of cadmium relative to tin of about 2: 1. The atomization is carried out in an atmosphere containing oxygen and argon (the usual concentration of oxygen at stone is 90%) and at an atomization pressure of about 16 mTorr. In another embodiment, a substantially amorphous CTO layer 120 is distributed on the support member 110 by reactive sputtering using a mixed metal grind of cadmium and tin having an atomic radius of cadmium relative to tin of about 2: 1. The atomization is carried out in a power figure of 150 W, an atomization pressure of 8 mTorr, and in an atmosphere containing 100% oxygen.
    In some embodiments, the docIdeq is controlled by the substantially amorphous CTO layer 120 by varying one or more of the process parameters used during the distribution step. In one embodiment, the thickness of the substantially amorphous CTO layer 120 is adapted to be at a range of about 50 mm to about 600 mm. In another embodiment, the substantially amorphous CTO layer 120 has a thickness Mom ranging from about 100 mm to about 500 mm. In a particular embodiment, the substantially amorphous CTO layer 120 has a thickness in a range from about 200 mm to about 400 mm.
    As indicated in, for example, Figure 1, the support member 110 also includes a first surface 112 and a second surface 114, in which embodiment the solar radiation is incident on the first surface 112 and the substantially amorphous CTO layer 120 is distributed adjacent to the second surface. 114. In this case, the configuration of the stand member 110 and the CTO layer 120 is also referred to as the "substrate" configuration. In one embodiment, the support member is transparent over the wavelength range for which transfer through the support member 110 is desired. In one embodiment, the stand member 110 may be transparent to visible light having a wavelength in a range from about 400 nm to about 1000 nm. In yet another embodiment, the coefficient of thermal expansion of the support member 110 is closer to the coefficient of thermal expansion of the substantially amorphous CTO layer 120 in order to build up cracking or buckling of the substantially amorphous CTO layer 120 during heat treatment. In some embodiments, the support member 110 includes a material capable of withstanding heat treatment temperatures greater than about 600 ° C, such as, for example, silicon and borosilicate glass. In some other embodiments, the support member 110 includes a material having a softening temperature lower than 600 ° C such as soda-lime glass. In some embodiments, certain other layers may be distributed between the substantially amorphous CTO layer 120 and the backing member 110, such as, for example, an anti-reflective layer, an index matching layer, and / or a diffusion barrier layer.
    In certain other embodiments, as illustrated in, for example, Figure 2, the substantially amorphous CTO layer 120 is distributed on a support member 110 so that the solar radiation is incident on the first surface 131 of the transparent layer and the second surface 133 of the transparent layer is distributed adjacent to the second surface 114 of the support member 110. In such cases, the configuration of the support member 110 and the CTO layer 120 is also referred to as the "substrate" configuration. The support member 110 includes a stack of a plurality of layers, such as, for example, a rear contact layer distributed on a rear substrate, a second semiconducting layer distributed on the rear contact layer, and a further semiconducting layer distributed on the second semiconducting layer. the layer. In such embodiments, the substantially amorphous CTO layer is distributed on the first semiconducting layer. The method also includes thermal treatment of the substantially amorphous CTO layer 120 in an atmosphere which is substantially free of cadmium from an external cold in order to form a transparent layer 120 as shown in Figure 2. In certain embodiments, during thermal treatment of the substantially amorphous CTO layer 120, loss of cadmium (for example by sublimation) or cadmium oxide (CdO) may occur in the amorphous CTO layer 120, which may result in a heat treatment atmosphere which includes cadmium or CdO. Consequently, "substantially free of cadmium from an external Ulla" as used herein means that cadmium or cadmium oxide is not supplied from an external cold, although it may occur as a result of sublimation or surface degradation of the amorphous CTO layer 120. Further sa means "substantially free of cadmium from an external cold" as used herein that the pressure of cadmium frail an external Ulla in the atmosphere in which thermal treatment is carried out is less than about 1 mTorr. In one embodiment, the method includes thermal treatment of the substantially amorphous CTO layer in an atmosphere bearing an impression of cadmium of less than about 4 Torr. In one embodiment, the method includes thermal treatment of the substantially amorphous CTO layer in an atmosphere bearing an impression of cadmium of less than about 10 Torr.
    In one embodiment, thermal treatment of the substantially amorphous CTO layer in an atmosphere free of cadmium refers to thermal treatment of the amorphous CTO layer 120 in the absence of a CdS film. In another embodiment, thermal treatment of the substantially amorphous CTO layer in an atmosphere substantially free of cadmium refers to thermal treatment of the amorphous CTO layer 120 in the absence of any additional external cold to cadmium conventionally used in heat treatment. of cadmium tin oxide, such as, for example, treating the amorphous CTO layer 120 with a solution that includes cadmium or cadmium cold before, during or after the heat treatment step.
    The CTO layer as deposited is essentially amorphous. As previously mentioned, the substantially amorphous CTO layer 120 is further thermally treated by heating the amorphous CTO layer 120 in an atmosphere which is substantially free of cadmium in an external Ulla. In some embodiments, thermal treatment of the amorphous CTO layer forms a transparent layer 130 that includes cadmium tin oxide having a substantially single phase spinel crystal structure. Accordingly, the thermal treatment step of the present invention eliminates the further step of preparing a CdS film on a substrate which is then used for heat treatment of CTO. Furthermore, it also reduces the amount of CdS used in the manufacture of a photoelectric device, and it is economically advantageous because CdS is an expensive material. In one embodiment, thermal treatment of the substantially amorphous CTO layer 1201 includes heating the substantially amorphous CTO layer 120 at a treatment temperature, under vacuum conditions, and for a period of time sufficient to allow formation of the transpatent layer 130 having the desired electrical and optical properties. The composition, thickness, morphology, electrical properties, and optical properties of the transparent layer 1 can be advantageously controlled by varying one or more of the treatment temperature, the duration of the heat treatment, and the vacuum conditions used during the heat treatment.
    In one embodiment, the substantially amorphous CTO layer 120 is heated at a treatment temperature in the range of about 500 ° C to about 700 ° C. In another embodiment, the substantially amorphous CTO layer 120 is heated at a treatment temperature in the range of about 550 ° C to about 680 ° C. In a particular embodiment, the substantially amorphous CTO layer 120 is heated at a treatment temperature ranging from about 600 ° C to about 650 ° C. In one embodiment, the substantially amorphous CTO layer 120 is heated at the treatment temperature for a period of time, ranging from about 1 minute to about 70 minutes. In another embodiment, the substantially amorphous CTO layer 120 is heated at the treatment temperature for a period of time ranging from about 10 minutes to about 60 minutes. In a particular embodiment, the substantially amorphous CTO layer 120 is heated at the treatment temperature for a period of time ranging from about 20 minutes to about 40 minutes. The time period for heat treatment refers to the time during which the CTO layer 120 is subject to the heat treatment temperature in the heat treatment furnace. The heat treatment time period does not include the initial ramping period during which the CTO film is heated up to the heat treatment temperature. Thus, a heat treatment time period of 20 minutes means that when the CTO film at night heats the heat treatment temperature after the heating period so that it is subjected to the heat treatment temperature for a period of 20 minutes. In some other embodiments, the time period for the heat treatment may be from an interval of about 0 seconds to about 15 seconds. A time period for heat treatment of 0 seconds means that when the CTO film reaches the heat treatment temperature after the heating period, it is removed from the oven immediately.
    The thermal heat treatment process is also controlled by varying the pressure conditions used during thermal treatment. In one embodiment, thermal heat treatment is performed under vacuum conditions, which are defined as pressure conditions that are less than atmospheric pressure. In some embodiments, thermal treatment may be performed in the presence of argon or gas at a constant pressure. In some other embodiments, thermal treatment is performed under dynamic pressure by continuous pumping. In one embodiment, thermal treatment is performed in the presence of nitrogen at a pressure less than about 500 Torr. In another embodiment, thermal treatment is performed in the presence of argon gas at a pressure equal to or less than about 2 Torr. In yet another embodiment, thermal treatment is performed in the presence of argon at a pressure ranging from about 90 Torr to about 490 Torr. In some other embodiments, thermal treatment is performed in the presence of argon gas at a pressure ranging from about 500 Torr to about 1 bar. The "pressure ratio" as used herein refers to the actual pressure of the sample during the heat treatment process.
    As mentioned above, the thermal heat treatment of the substantially amorphous CTO layer results in the formation of a transparent layer 130. In one embodiment, the transparent layer 130 includes substantially uniform single phase polycrystalline CTO, for example formed by heat treatment of the substantially amorphous CTO layer 120. In some embodiments, the substantially crystalline cadmium tin oxide has an inverted spinel crystal structure. The substantially uniform single-phase crystalline CTO forming the transparent layer 130 is referred to herein as "cadmium tin oxide" as opposed to a "substantially amorphous CTO" layer 120 which is distributed on the base member 110 and thermally treated to form the transparent layer. layer 130.
    In some embodiments, the transparent layer may have the desired electrical and optical properties and may act as a transparent conductive oxide layer (TCO layer). In some embodiments, the transparent layer 130 may also include an amorphous component, such as amorphous cadmium oxide, amorphous tin oxide, or combinations thereof.
    In one embodiment, the transparent layer 130, as shown in, for example, Figure 2, includes a substantially homogeneous concentration of cadmium tin oxide through the thickness of the layer. In such cases, the atomic concentrations of cadmium and tin in the transparent layer are substantially constant throughout the thickness of the entire layer. The term "substantially constant" as used herein means that the variation of the atomic concentrations of cadmium and tin is less than about 10 ° / o through the thickness of the transparent layer 130.
    In another embodiment, the transparent layer, as shown in, for example, Figure 3, includes a first region 132 and a second region 134. The first region 132 includes cadmium tin oxide and the second region 134 includes tin and oxygen. In some embodiments, the second region 134 also includes cadmium and an atomic concentration of cadmium in the second region 134 is similar to an atomic concentration of cadmium in the first region 132. Consequently, in such cases, thermal heat treatment of the substantially amorphous CTO layer results. 120 to form a transparent layer 130 having a cadmium depleted region of the second region 134. In one embodiment, the atomic concentration of cadmium in the second region 134 is less than about 20% of the total atomic content of the second region 134.
    The transparent layer may further be characterized by one or more of thickness, electrical properties, or optical properties. In one embodiment, the transparent layer 130 has a thickness Mom ranging from about 100 nm to about 600 nm. In another embodiment, the transparent layer 130 has a thickness Mom ranging from about 150 nm to about 450 nm. In a particular embodiment, the transparent layer 130 has a thickness Mom ranging from about 100 nm to about 400 nm. In some embodiments, the transparent layer 130 has an average optical transfer greater than about 80%. In some other embodiments, the transparent layer 130 has an average optical transfer greater than about 90%. In a particular embodiment, the transparent layer 130 has an average optical transfer stone of about 95%. The transparent layer 130, which can act as a TCO layer, can also be characterized by its electrical resistivity, mobility, and its barard density values. In some embodiments, the transparent layer 130 has an electrical resistivity (s) of less than about 2 x -4 Ohm-cm. In some other embodiments, the transparent layer 130 has an electrical resistivity (Q) of less than about 1.75 x -4 Ohm-cm. In a particular embodiment, the transparent layer 130 has an electrical resistivity (Q) that is less than about 1.5 x 4 Ohm-cm. In some embodiments, the transparent layer 130 has a mobility that is approximately 45 m2 / V-s. In some other embodiments, the transparent layer 130 has a mobility that is approximately 50 m2 / V-s. In a particular embodiment, the transparent layer 130 has a mobility of approximately 60 m2 / V-s. In some embodiments, the transparent layer 130 has a barard density that is approximately 7 x cm '. In some other embodiments, the transparent layer 130 has a barard density of about 8 x cm-3. In a particular embodiment, the transparent layer 130 has a barard density such as that of about 9 x cm-3.
    As previously noted, the thermal treatment step is performed in the absence of a CdS film conventionally used for heat treatment of cadmium tin oxide.
    Accordingly, the thermal treatment step of the present invention eliminates the further step of preparing a sacrificial CdS film on a non-recyclable substrate used senate for heat treatment of cadmium tin oxide and obtaining a crystalline CTO layer having the desired electrical and optical properties. . Furthermore, the thermal treatment step also reduces the amount of CdS used in the manufacture of a photoelectric device, and is economically advantageous because CdS is an expensive material. The method also allows a continuous process for the formation of the CTO layer with minimal intervention as a typical requirement for assembly / disassembly of the CTO and CdS layers before and after the heat treatment process. Accordingly, the heat treatment process of the present invention also results in reduced process time, which leads to higher capacity, which can lead to lower manufacturing costs.
    As discussed in detail below, certain embodiments of the invention also relate to methods of manufacturing photoelectric devices. The method is described with reference to Fig. 4 in one embodiment. Sisom is stated e.g. in Fig. 4, the method also includes distributing a first semiconductor layer 140 on the transparent layer 130; distributing a second semiconductor layer 150 on the first semiconductor layer 140; and distributing a rear contact layer 160 on the second semiconductor layer 150 to form a photoelectric device 300. As previously noted, the heat treatment step eliminates the need for one or more additional manufacturing steps used in conventional heat treatment of substantially amorphous CTO using a CdS Film. The configuration shown in Fig. 4 is typically referred to as a "superstrate" configuration, where the solar radiation 440 intones against the pillar element 110. Consequently, in a side configuration, it is unobtrusive that the pillar element 110 is substantially transparent.
    According to one embodiment, the method of manufacturing a photoelectric device in "substrate" configuration is provided. The method includes forming a transparent layer 130 as previously described on a support member 110, so that the solar radiation 400 is incident on the transparent layer 130, as shown in Fig. 5. In the side embodiment, the support member 110 includes a rear contact layer 160 which is distributed on a rear substrate 190, a second semiconductor layer 150 distributed on the rear contact layer 160, a first semiconductor layer 140 distributed on the second semiconductor layer 150, and the transparent layer 130 distributed on the first semiconductor layer 140. In a side configuration, since the solar radiation is incident against the transparent layer 130, the backing substrate may include a metal.
    In some embodiments, the first type of semiconductor layer 140 and the second semiconductor layer 150 may be doped with a p-type dopant or an n-type dopant to create a heteroover. As used in this context, a heteroover is a semiconductor transition which is made up of layers of different semiconductor materials. These materials usually have uneven band gaps. As an example, a heterooverge can be created by contact between a layer or region of a conductivity type with a layer or region of opposite conductivity, e.g. and "p-n" transition.
    In some embodiments, the second semiconductor layer 150 includes an absorber layer. The absorber layer is part of a photoelectric device in which the conversion of electromagnetic energy of incident light (eg sunlight) into electron greetings (the viii saga to electric current) takes place. A photoactive material is typically used to form the absorber layer. Suitable examples of photoactive materials include cadmium telluride (CdTe), cadmium-zinc telluride (CdZnTe), cadmium-magnesium telluride (CdMgTe), cadmium-manganese-telluride (CdMnTe), cadmium-zinc-telluride (cdMnTe), -telluride (ZnTe), CIS (copper, indium, sulfur), GIGS (copper, indium, gallium, selenium), CZTS 19 (copper, zinc, tin, sulfur) and combinations thereof. The above-mentioned photoactive semiconductor materials can be used alone or in combination. Vidare sa. These materials can be present in more than one layer, where each layer has different types of photoactive materials or bare combinations of the materials in separate layers. In a particular embodiment, the second semiconductor layer 150 or the absorber layer includes cadmium telluride (CdTe) as the photoactive material. CdTe is an efficient photoactive material used in photoelectric thin film devices. CdTe is relatively easy to deposit and is therefore considered suitable for large-scale production. In one embodiment, the second semiconductor layer 150 has a thickness in the range of about 1500 nm to about 4000 nm.
    The first semiconductor layer 140 is distributed adjacent to the transparent layer 130. In a particular embodiment, the first semiconductor layer 400 includes cadmium sulfide (CdS) and may be referred to as the "window layer". In one embodiment, the first semiconductor layer 140 has a thickness in a range from about 30 nm to about 150 μm. A rear contact layer 160 is further distributed adjacent to the second semiconductor layer 150 and in ohmic contact therewith. The rear contact layer 160 may include a metal, semiconductor or a combination thereof. In some embodiments, a back contact layer 160 may include gold, platinum, molybdenum, or nickel, or zinc telluride. In some embodiments, one or more additional layers may be applied between the second semiconductor layer 150 and the rear contact layer 160, such as e.g. a semiconductor layer of p + type. In some embodiments, the second semiconductor layer 150 may include p-type cadmium telluride (CdTe) which can be further treated or doped to further improve the back contact resistance, such as by treatment with cadmium chloride or by forming a zinc telluride or copper telluride layer. on the back. In one embodiment, the rear contact resistance can be improved by increasing the p-type bars in the CdTe material to form a p + type layer on the back of the CdTe material which is in contact with the rear contact layer.
    In some embodiments, the method also includes distributing a buffer layer 170 between the transparent layer and the first semiconductor layer 140, as shown in e.g. Fig. 4. In one embodiment, the buffer layer 170 includes an oxide selected from the group consisting of tin oxide, indium oxide, zinc oxide, zinc stannate, and combinations thereof. In a particular embodiment, the buffer layer 170 includes tin oxide or cubes of mixed oxide thereof.
    One or more of the first semiconductor layer 140, the second semiconductor layer 150, the rear contact layer 160, or the buffer layer 170 (optional) may be distributed by one or more of the following techniques: sputtering, evaporation, electrodeposition, screen printing, spraying, physical vapor deposition, or sublimation in the closed space. One or more of these layers may also be heated or post-processed in order to manufacture the photoelectric device 300.
    EXAMPLES The following examples are presented for the purpose of further illustrating certain embodiments of the present invention. These examples should not be construed as limiting the invention in any way.
    Example 1: Non-reactive sputtering of cadmium-tin oxide layers from a ceramic grind Thin films of cadmium-tin oxide (CTO) were prepared on a 1.3 mm thick glass stand by non-reactive sputtering with magnetron direct current (DC) & into a pre-reacted cadmium stannate template having a Cd: Sn ratio of about 2: 1. The sputtering process is challenged in an atmosphere containing oxygen and argon (where the concentration of oxygen was 90%) at a pressure of about 16 mTorr. The thickness of the sputtered GTO film was about 230 nm. The ratio of cadmium to tin in the sputtered films was determined by inductively coupled plasma spectroscopy (ICP) and X-ray fluorescence spectroscopy (XRF) and was about 1.77.
    Example 2: Heat treatment of non-reactive sputtered cadmium tin oxide using CdS film Samples prepared in Example 1 were heat treated by placing the CTO films prepared above in contact with a CdS coated glass tube (hereinafter referred to as CdS near heat treatment or "CPA"). The unit was heated to a temperature of 630 ° C for about 20 minutes in the presence of argon at a pressure of about 160 Tort. Example 3: Heat treatment of non-reactive sputtered cadmium tin oxide without CdS film Thin cadmium tin oxide (CTO) films were prepared on a glass bead using the method described in Example 1. Three CTO samples (1.5 inch x 1, 5 inches) was cut and sealed in quartz tubes with a diameter of 2 inches. After the CTO samples were loaded into the quartz tube, a vacuum was applied. The tube was then either stirred under vacuum or refilled with 50 Torr and 100 Torr N2, respectively. The CTO samples were heat treated at 6 ° C for 20 minutes in a three zone tube furnace connected to a vacuum chamber, which was preheated to a temperature of 630 ° C before heat treatment. As noted, the time period for heat treatment refers to the time during which the CTO file was subjected to the heat treatment temperature in the furnace. The time period does not include the initial ramp / rise period during which the CTO film is ramped / temperature raised to the heat treatment temperature. Consequently, a heat treatment time period of 0 minutes means that as soon as the CTO film reached the heat treatment temperature after the ramp period, it was immediately removed from the furnace. A typical ramp rate of 2-3 ° C / s is used for the heat treatment experiment. To further understand the effect of ramp speed on electrical properties, several ramp speeds from 0.28 ° C / s to 20 ° C / s were used.
    Three different samples were prepared on this salt at three different pressure ratios: —200 Tort (Sample 1), —90 Tort (Sample 2), and —8 x -3 Tort (Sample 3). The "pressure ratio" as used herein refers to the actual pressure of the sample during the heat treatment process and not the gas pressure. Heat treatment in the absence of CdS or an external cold to cadmium is referred to as the standard thermal heat treatment process or "STA".
    The surface resistance of the CTO samples was heat treated with or without CdS filines matte using a 4-point probe, where the probe was placed in the center of the sample. The total transmission and reflection were measured using a Cary UV-Vis spectrophotometer in order to calculate the optical absorption as a function of wavelength. The total absorption was then calculated between 325 and 850 μm weighted against the solar photon flux spectrum.
    Fig. 6 shows the values of weighted absorption and surface resistance for the CTO samples heat-treated in the absence of CdS film (Example 2) compared with the CTO samples heat-treated in the presence of CdS film (Example 1). Fig. 6 shows that the values for the absorption and the surface resistance of samples heat-treated in the absence of cadmium (STA-treated) are comparable to the values obtained by heat treatment in the presence of CdS-film (CPA-treated). Furthermore, the surface resistance (Rsh n,) —7.39 ± 0.5 SZ / sq 5 and 3.81 ± 0.11% optical absorption by heat treatment at 630 ° C for 20 minutes under 200 Torr of heat treatment pressure (as illustrated in Fig. 6). For the same heat treatment temperature and time, the surface resistance decreased when the pressure was raised from 8 x -3Torr to 200 Torr. Table 1 summarizes the optical and electrical properties of frail Hall feeds for samples heat-treated in the absence of CdS film. Table 1: Electrical and optical properties of samples heat-treated in the absence of CdS-filin Samples Treatment pressure Thickness Rsheet Absorption Resistivity Mobility Bar concentration (nm) (52 / sq) (52 cm) (cm2 / V). $) (cm-3) 1 —200 214 7.01 3.86% 1.47E-04 47.1 9.00E + 2 —90 214 10.78 2.94% 2.12E-04 45.7 6, 44E + Fig. 7 shows X-ray diffraction patterns obtained from the three sets of samples heat-treated at three different pressures, illustrating that in any case the heat-treated films consisted only of spinel phase cadmium-tin oxide, without flake detectable presence of tin oxide or other secondary phases. The XRD samples also seemed to indicate that better crystal quality, such as sharper and narrower Bragg peaks, can be directly linked to the bearing value of surface resistance, as indicated, for example, for CdS films heat treated at 200 Torr. Figures 8A and 8B show the XPS depth profiles of cadmium tin oxide filin heat treated under vacuum at 200 Torr and 90 Torr, respectively. XPS depth profiles for samples heat treated under 90 Torr and 200 Torr indicate a cadmium depleted region (second region) near the surface of both samples. Furthermore, the XPS depth profiles indicate that the atomic ratio of cadmium in relation to tin in the sample's main mass (first region) is within a range frail about 1.4 to about 1.5 for the two samples after the heat treatment step.
    Fig. 9 shows the effect of ramp speed on the surface resistance of heat treated CTO files. A slow ramp speed seemed to increase Rsh „t dramatically and an optimal ramp speed of 2-3 ° C / s was established. Example 4: Reactive sputtering of cadmium-tin oxide layers from a mixed metallic CTO film was formed on a borosilicate glass by reactive sputtering from a mixed metal grinding in the presence of oxygen at different sputtering pressures. Three different mixed metal mills having atomic ratios of cadmium in ratio to tin of about 1.5: 1, 2: 1 and 2.5: 1 were sputtered using different oxygen concentrations and sputtering pressures.
    Table 2 shows the different sputtering ratios used for the different mills and the corresponding thickness of the cadmium tin oxide layer as deposited.
    ME Cd: Sn atomratio Oxygen (vor / o) Pre-sputtering force (W) Sputtering pressure (mTorr) Thickness (nrn) 1.5: 1 100 60 8 213 1.5: 1 100 100 8 216 1.5: 1 100 100 16 228 1.5: 1 100 18 216 1.5: 1 100 116 2 2: 1 100 8 2 2: 1 100 100 8 224 2: 1 100 100 8 224 2: 1 100 100 16 2 2: 1 100 18 226 2.5: 1 100 18 2 2.5: 1 60 18 221 2.5: 1 60 100 8 229 2.5: 1 80 100 8 246 2.5: 1 80 18 248 Example 5: Heat treatment of reactive sputtered cadmium tenno: dd using CdS-Ellm Cadmium Proximity Annealing (CPA) is challenged by placing the CTO films prepared above in Example 3 in contact with a CdS-coated stand element. glass. The unit was heated to a temperature of 630 ° C 24 for about 20 minutes in the presence of N 2 gas at a pressure in a range from about 80 Torr to about 250 Torr.
    Example 6: Heat Treatment of Reactivated Sprained Cadmium Tin Oxide without CdS Film Standard Thermal Annealing (STA) of 5 samples prepared in Example 4 is challenged using the method described in Example 2 by heating the sputtered films. at a heat treatment temperature of 630 ° C for 20 minutes and in the presence of N 2 gas at a heat treatment pressure of about 200 Tort.
    The surface resistance of the CTO samples heat treated with or without CdS films was measured using a 4-point probe, where the probe was placed near the center of the sample. The total transfer and reflection were measured using a Cary UV-Visspectrophotometer in order to calculate the optical absorption as a function of wobbling. The total absorbance was then calculated between 325 nm and 850 nm weighted against the solar photon flux spectrum.
    Fig. 10 shows the comparison between the value of the proportion of absorption for CPA- and STA heat-treated CTO films reactively sputtered using different grinding concentrations and using different fumbling conditions. As illustrated in Fig. 10, the proportion of absorbance Oka seemed to increase with the atomic ratio of cadmium in relation to tin. At an atomic ratio of cadmium in a ratio of 2: 1, the values for the proportion of absorption were comparable with those between the CPA- and STA-treated films. As shown in Fig. 10, the resistivity values of the atomic ratio of cadmium in the ratio to tin olcar ranged from 2: 1 to 2.5: 1.
    Fig. 11 shows the comparison between the values of electrical resistivity for CPA and STA heat treated films sputtered using different grinding concentrations and using different sputtering conditions. As illustrated in Fig. 11, the resistivity values at an atomic ratio of cadmium in the ratio of 2: 1 were comparable between the CPA and STA heat treated films. Figures 12 and 13 show the barard density and mobility value of CPA and STA heat treated films sputtered using different grinding concentrations and using different sputtering ratios. As shown in Figures 12 and 13, the values for barard density and mobility decrease when the atomic ratio of cadmium in ratio to tin is reduced from 2: 1 to 2.5: 1.
    Figures 14-16 show the values for the electrical resistivity, bar concentration, and mobility of CPA-respective STA heat-treated CTO films sputtered using a Cd: Sn ratio of 2: 1 as a function of different sputtering ratios. As illustrated in Figures 14-16, higher sputtering power and higher sputtering pressures result in higher values for electrical resistivity, bar concentration, and mobility, indicating that electrical and optical properties of the transparent layer can be advantageously controlled by varying the sputtering conditions. Furthermore, the optical and electrical properties of the CPA heat-treated and conventional STA-heat-treated CTO films were comparable, eliminating the need for a separate CdS-based heat treatment step. All values reported in Figures 6-16 were obtained in the same laboratory using the same equipment and analytical techniques.
    Example 7: Comparison between electrical properties of CTO films reported in the literature and the CTO films sputtered and heat treated in accordance with certain embodiments of the invention.
    The CTO films prepared in Examples 1 and 4 were also heat treated using a combination of different mill concentrations, heat treatment temperatures, different time periods, and under different pressure conditions using the standard thermal heat treatment method (STA) and heat treatment method close to cadmium ( CPA). The atomic ratio of cadmium in relation to tin in amorphous CTO film as deposited was determined using XPS and determined to be in the range of about 1.77 to about 2: 1. As previously described, a heat treatment time period of 0 minutes means that the GTO film was ramped to the desired heat treatment temperature and when the heat treatment temperature was reached, the surrounding frail surface was removed.
    Table 3: Deposition and heat treatment conditions for CTO films in accordance with certain embodiments of the invention and for the CTO films described in the literature. 26 CTO file deposition Heat treatment Sample Template Cd: Sn ratio Amorphous CTO film Cd: Sn ratio Temp (° C) Time (min) Pressure and environment la 2: 1 1.77: 1 6480 Dry N, la 2: 1 1, 77: 1 6200 Torr N2 3a 2: 1 1.77: 1 690 Torr Ny 4 '2: 1 1.77: 1 6172 Torr N2 5a 2: 1 1.77: 1 600 0 145 Torr N2 6' 2: 1 1.77: 1 600 269 Torr N2 7a 2: 1 1.77: 1 6163 Torr N2 8 2: 1 1.77: 1 660 0 157 Torr N2 9a 2: 1 1.77: 1 660 182 Torr N2 10 ' 2: 1 1.77: 1 6158 Torr N2 11a 2: 1 1.77: 1 6156 Torr N2 / CdS 12b 2: 1 2: 1 6240 Torr N2 13b 2.5: 1 2.5: 1 2 14b 2: 1 2: 1 6248 Torr N2 / CdS 15b 2.5: 1 2.5: 1 2 16b 1.5: 1 1.5: 1 6153 Torr N2 / CdS 17 b 1.5: 1 1.5: 1 6165 Ton N2 Wu, Thin Solid Films, 1996 (286) 274-276` 2: 1 - 680 10-Ar / CdS Miyake et. al.
    US 43494d 2: 1 200- 400 4x-6 Ton (vacuum) 5x2 Ton Ar Tahar et. al., J Am Ceram Soc, 2001 (84) 85-91e - - 680 Floclande N2 Mamazza Jr. et al., Thin Solid Films, 2005 (484) 26-33f - 2.15: 1 600 500 Ton H2 / He 27 a Samples 1-11 were deposited by non-reactive sputtering with DC magnetron from a ceramic cadmium stannate mg sputtered at room temperature , in the presence of 02 (> 90%), at a sputtering pressure of 16 milliTorr. b Samples 12-15 were deposited by reactive sputtering with DC magnetron using 5 mixed Cd / Sn metal at 150 W, 8 milliTorr in 100% 02. b Sample 16 was deposited by reactive sputtering with DC magnetron using mixed Cd / Sn Sn metal grind at 60 W, 8 milliTorr in 100% 02. b Sample 17 was deposited by reactive sputtering with DC magnetron using mixed Cd / Sn metaling at 100 W, 8 milliTorr in 100% 02.
    Thin filters were deposited by non-reactive sputtering with a DC magnetron from a ceramic cadmium stannate template atomized at room temperature, in the presence of O 2 (100%), at 10-17.5 milliTorr. d Thin films were deposited by non-reactive sputtering with DC magnetron using Cd / Sn alloy at 2-2.5 kV, 10 milliTorr with 2-100% 02. e Thin films were prepared by dip coating using cadmium acetate and tin isopropoxide. f Thin was again prepared by RF magnetron co-sputtering from cadmium mdd- and tenno) ddmg at room temperature, in the presence of Ar (100%), at 3 milliTorr. "-" indicates that the deposit or heat treatment ratio was not available from the literature.
    Table 4 shows the comparison between the electrical properties of CTO films according to certain embodiments of the invention and of the CTO films shown in the literature. As illustrated in Fig. 4, by sputtering deposition of an amorphous CTO film (Cd: Sn 1.77) from a ceramic grinder and by using the standard thermal heat treatment method, a CTO film (Sample 3) having a resistivity is advantageously obtained. of 1.38 x 4 Ohm-cm, mobility of 52.4 cm 2 / Vs, and a barard density of 8.64 x cm-3. These properties were comparable to the best reported values (resistivity of 1.28 x 4 Ohm-cm, mobility of 54.5 cm 2 / V.s, and a barard density of 8.94 x 10 'cm 3) in the literature of Wu et al. Furthermore, as illustrated in Table 4 sa. obtained by reactive sputtering of an amorphous CTO film (Cd: Sn-2: 1) from a mixed metal and using the standard thermal heat treatment method advantageously a CTO film (sample 14) having a resistivity of 1.48 x 4 Ohm- 28 cm, mobility of 61.66 cm2 / Vs, and a barard density of 6.85 x cm-3. Furthermore, the electrical properties obtained for CTO films having a Cd: Sn ratio —1.77 (Sample 3) and Cd: Sn ratio —2 (Sample 14) were similar to the properties reported in the CTO literature. films processed in the absence of CdS.
    Furthermore, substantially improved electrical and optical properties were obtained using an amorphous CTO film having a Cd: Sn ratio of about 1.77 to about 2: 1 compared to the properties reported by Mamazza Jr. et al. for the same Cd: Sn ratio. For example, the resistivity values reported by Mamazza et al. for Cd: Sn ratio in a range from 1.5: 1 to 2: 1 lie to four times higher than the resistivity values obtained according to certain embodiments of the invention. The best obtained resistivity value reported by Mamazza Jr. et al. dr 2.07 x 10 Ohn-cm, when the CTO films were deposited using co-sputtering of an amorphous CTO film having a Cd: Sn ration of 2.15. However, the mobility guards and the barards density guards that were achieved by Mamazza Jr. et al. essentially stock. As previously noted, crystalline CTO films having a combination of low absorbance, low resistivity, high mobility and high barard density may be desired to improve the efficiency and manufacturability of thin film sockets. Methods of making crystalline GTO films having such an advantageous combination of electrical and optical properties are provided in accordance with certain embodiments of the present invention. Table 4: Comparison between the electrical properties of CTO films according to certain embodiments of the invention and of the CTO films shown in the literature. The best electrical properties reported in the literature are listed in the table.
    Electrical properties Sample Thickness (nm) Surface resistance (Ohrn / sq) Resistivity (x -4 Ohm-cm) Mobility (sm2 / V. $) Barard density (2 ° crn-3) 1,200 6.9 1.38 52.4 8 , 64 2 214 7.01 1.47 47.1 9.00 3 214 10.78 2.12 45.7 6.44 4 27.700 1.69 53.3 6.96 29.268 2.13 8.26 37.4 6 223 7.319 1.63 49.3 8.06 29 7 212 7.591 1.61 49.4 7.99 8 229 6.91.59 45.4 8.99 9 28.217 1.77 54.1 6.62 217 7.27 1.58 53.2 7. 11 25.6 1.28 52 9.14 12 226 6.54 1.48 61.66 6.8 13 29.62.27 42.79 6.44 14 226 6.36 1.44 66.3 6.5 221 14.3.41.46 4.78 16 213 10.44 2.22 45.98 6.1 17 214.43 3.12 42.8 4.68 Wu, Thin Solid Films, 1996 (286) 274-276` 52.1.28 54.8.94 Miyake et. al.
    US 4349425 "24.363 8.89 29.4 2.69 Tahar et al., J Am Ceram Soc, 2001 (84) 85-9r 14.3 3.3 12.0 15.
    Mamazza Jr. et al., Thin Solid Films, 2005 (484) 26-33 '200 2.07 32.3 7.4 Example 8: CdTe cells leached by inhalation ay CTO films heat treated by heat treatment method close to CdS and by standard thermal heat treatment method.
    CdTe solar cells were applied to CTO films heat-treated using a standard heat treatment process (Example 2) to compare their properties with those of cells made on heat-treated CTO in I-lather of CdS (Example 3). A set of 1.5 inch x 1.5 inch parts including -200 mm thick, heat treated CTO film on 1.3 mm thick Corning glass was removed by performing a device integration. Four parts were heat treated using standard thermal heat treatment process (STA) and two parts were heat treated using heat treatment process using CdS (CPA). All were washed and coated with a 105 nm thick 5% Zn: SnO 2 (ZTO) film. The devices were fabricated using: 80 nm CdS: 0 (5%); 3 μl of oxygenated CdTe deposited at 550 ° C, CdC12 activation process and a back contact layer of gold. The samples were mated in a solar generator without cell isolation.
    Table 5: The initial Rshee, and optical absorption properties of the heat treated parts used for the device integration.
    Sample No. Heat treatment process Rsheet (Ohm / square) Optical absorption (%) 1 CPA 6.3 3.78 2 CPA 6.3 3.78 3 STA 6.73.17 4 STA 10.53 3.12 STA 6.69 3.82 6 STA 8.73 3.19 All the parts used for this device integration had an initial weighted optical absorption of less than 5%, as shown in Table 5. Fig. 17 shows the cell efficiency distributed as a function of the initial optical absorption for each part . Fig. 18 shows the degree of warmth distribution with respect to the heat treatment process (STA versus CPA). The results shown in Fig. 17 illustrate that the use of the standard thermal heat treatment process for the spot treatment of the CTO films as deposited does not appear to have a flawless effect on the performance of the CdTe cells. Fig. 18 shows that there is no direct connection between the initial optical absorption of the parts used in this study and the short-circuit current usc) of the cells made of these parts. The highest average is obtained in the part with the highest initial optical absorption.
    The foregoing examples are illustrative only, having the function of exemplifying only certain features of the invention. The appended claims are intended to define the invention as broadly as it has been developed and the examples presented herein are illustrative of certain selected embodiments among a variety of all possible embodiments. Consequently, the applicant's intention that the annexed seas should not be limited by the choice of examples used to illustrate features of the present invention. As used in the claims si, the word "include" and its grammatical variants logically also include phrases of varying and different scope such as, for example, but not limited thereto, "consisting essentially of" and "consisting of". When necessary, intervals have been provided. These intervals include all sub-intervals in between. It should be expected that variations of these ranges will occur to one skilled in the art, and in cases where these variations are not already available to the public, these variations should, if possible, be considered to be appreciated by the annexed seas.
    It is also expected that advances in science and technology will provide equivalents and replacements that are not currently monitored due to imprecise language, and even these variations should, if possible, be considered to be appreciated by the attached seas. 32
    权利要求:
    Claims (35)
    [1]
    A method, comprising: distributing a substantially amorphous cadmium-tin oxide layer on a support member in an atmosphere having a percentage content of oxygen stone of about 60% by volume; and thermal treating the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external cold to form a crystalline transparent layer, the thermal treatment comprising heating the substantially amorphous cadmium tin oxide layer at a treatment temperature within the range from about 500 ° C to about 700 ° C at pressure conditions which are less than atmospheric pressure, and wherein the transparent layer has an electrical resistivity which is less than about 2 X -4 Ohm-cm.
    [2]
    The method of claim 1, wherein the transparent layer has an electrical resistivity of less than about 1.8 x -4 Ohm-cm.
    [3]
    The method of claim 1, wherein the transparent layer has an electrical resistivity of less than about 1.5 x -4 Ohm-cm.
    [4]
    The method of claim 1, wherein an atomic ratio of cadmium relative to tin in the substantially amorphous cadmium tin oxide layer is less than about 2.5: 1.
    [5]
    The method of claim 1, wherein an atomic ratio of cadmium relative to tin in the substantially amorphous cadmium tin oxide layer is equal to or less than about 2: 1.
    [6]
    The method of claim 1, wherein an atomic ratio of cadmium relative to tin in the substantially amorphous cadmium tin oxide layer is equal to or less than about 1.8: 1. 33
    [7]
    The method of claim 1, wherein an atomic ratio of cadmium relative to tin in the substantially amorphous cadmium tin oxide layer is in a range of from about 1.7: 1 to about 2.1.
    [8]
    The method of claim 1, wherein the transparent layer comprises cadmium-tin oxide having a substantially single-phase spinel crystal structure.
    [9]
    The method of claim 1, wherein the thermal treatment comprises heating the amorphous cadmium tin oxide layer at a treatment temperature, under vacuum conditions, and for a period of time sufficient to allow formation of the transparent layer.
    [10]
    The method of claim 1, wherein the thermal treatment comprises heating the substantially amorphous cadmium tin oxide layer for a period of time in a range of from about 1 minute to about 60 minutes.
    [11]
    The method of claim 1, wherein the thermal treatment is performed at a pressure less than about 500 Torr.
    [12]
    The method of claim 1, wherein the thermal treatment is performed at a pressure equal to or less than about 250 Torr.
    [13]
    The method of claim 1, wherein distributing a substantially amorphous cadmium tin oxide layer comprises sputtering, evaporation, chemical vapor deposition, rotary coating, or dip coating.
    [14]
    The method of claim 1, wherein distributing a substantially amorphous cadmium-tin oxide layer comprises sputtering from one or more mills bearing an atomic ratio of cadmium relative to tin to a range of from about 1.5: 1 to about 2.5: 1.
    [15]
    The method of claim 1, wherein distributing a substantially amorphous cadmium-tin oxide layer comprises sputtering from one or more mills bearing an atomic ratio of cadmium in ratio to tin in a range of from about 1.5: 1 to about 2: 1. 34
    [16]
    The method of claim 1, wherein distributing a substantially amorphous cadmium-tin oxide layer comprises sputtering from a single mill comprising cadmium-tin oxide.
    [17]
    The method of claim 1, wherein distributing a substantially amorphous cadmium-tin oxide layer comprises reactive sputtering from a single mill comprising cadmium-tin oxide.
    [18]
    The method of claim 1, wherein the transparent layer comprises: 1. a first region comprising cadmium tin oxide; and 2. a second region comprising cadmium, tin, and oxygen, wherein an atomic concentration of cadmium in the second region is less than an atomic concentration of cadmium in the first region.
    [19]
    The method of claim 1, wherein the transparent layer has a thickness within an intensity of from about Inc 1 nm to about 400 nm.
    [20]
    The method of claim 1, wherein the transparent layer has a mobility greater than about 45 cm 2 / Vs.
    [21]
    The method of claim 1, wherein the transparent layer has an average optical transfer greater than about 95%.
    [22]
    A method, comprising: distributing a substantially amorphous cadmium-tin oxide layer on a support member by reactive atomization from one or more targets in an atmosphere having a percentage content of oxygen greater than about 60% by volume; and heat treating the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external Ulla to form a crystalline transparent layer, the thermal treatment comprising heating the substantially amorphous cadmium tin oxide layer at a treatment temperature within the range from about 500 ° C to about 700 ° C at pressure conditions which carry less than atmospheric pressure, and wherein the transparent layer has an electrical resistivity which is less than about 2 x -4 Ohm-cm.
    [23]
    The method of claim 22, wherein an atomic ratio of cadmium relative to tin in the one or more mills is less than about 2.5: 1.
    [24]
    The method of claim 22, wherein an atomic ratio of cadmium relative to tin in the one or more mills is equal to or less than about 2: 1.
    [25]
    The method of claim 22, wherein distributing a substantially amorphous cadmium tin oxide layer comprises reactive sputtering from a mill 10 comprising cadmium and tin.
    [26]
    The method of claim 22, wherein distributing a substantially amorphous cadmium tin oxide layer comprises reactive sputtering from a first mill comprising cadmium and a second mill comprising tin.
    [27]
    The method of claim 22, wherein distributing a substantially amorphous cadmium tin oxide layer comprises reactive sputtering from a mill in an atmosphere comprising oxygen at a concentration greater than about 60% by volume.
    [28]
    The method of claim 22, wherein distributing a substantially amorphous cadmium tin oxide layer comprises reactive sputtering from a mill at a pressure in a range of from about 1 milliTorr to about milliTorr.
    [29]
    The method of claim 22, wherein the transparent layer has an electrical resistivity of less than about 1.5 x -4 Ohm-cm.
    [30]
    The method of claim 22, wherein the transparent layer has an average optical transfer rate greater than about 95%.
    [31]
    A method, comprising: 36 distributing a substantially amorphous cadmium tin oxide layer on a support member in an atmosphere having a percentage of oxygen stone content of about 60% by volume; thermal treatment of the substantially amorphous cadmium tin oxide layer in an atmosphere which is substantially free of cadmium from an external cold to form a crystalline transparent layer, the thermal treatment comprising heating the substantially amorphous cadmium tin oxide layer at a treatment temperature in the range of about 500 ° C to about 700 ° C at pressure ratios less than atmospheric pressure, and wherein the transparent layer has an electrical resistivity of less than about 2 X -4 Ohm-cm; distributing a first semiconductor layer on the transparent layer; distributing a second semiconductor layer on the first semiconductor layer; and distributing a rear contact layer on the second semiconductor layer to form a photoelectric device.
    [32]
    The method of claim 31, wherein the first semiconductor layer comprises cadmium sulfide.
    [33]
    The method of claim 31, wherein the second semiconductor layer comprises cadmium telluride.
    [34]
    The method of claim 31, further comprising distributing a buffer layer between the transparent layer and the first semiconductor layer.
    [35]
    The method of claim 31, wherein the buffer layer comprises an oxide selected from the group consisting of tin oxide, indium oxide, zinc oxide, and combinations thereof. 37 1/13 7.- 1
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    同族专利:
    公开号 | 公开日
    US8476105B2|2013-07-02|
    US20120164785A1|2012-06-28|
    DE102011056639A1|2012-06-28|
    MY151237A|2014-04-30|
    SE1151169A1|2012-06-23|
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    TWI558830B|2016-11-21|
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    优先权:
    申请号 | 申请日 | 专利标题
    US12/976,166|US8476105B2|2010-12-22|2010-12-22|Method of making a transparent conductive oxide layer and a photovoltaic device|
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